A Quantum Leap in Emerging Memory Technology

ReRAM (Resistive RAM)

Weebit Nano’s technology – An easy-to-manufacture, fast, cost effective and energy-efficient nonvolatile ReRAM (Resistive RAM).
ReRAM is an emerging memory technology that combines the advantages of both RAM and Flash: ReRAM is a non-volatile, extremely fast, low-power and cost-effective technology that can endure significantly higher number Program/Erase cycles than Flash memory. It has been studied and developed for the last decade and its commercial usage is expected to increase dramatically over the next few years.

Thanks to its simple structure, a ReRAM cell is small, fast, easy to stack, and consumes extremely low power. The key challenge in ReRAM technology is in choosing the appropriate resistive material that enables changes to its chemical or physical structure, and is able to restore it in the most repeatable and cost effective manner.

The Technical Structure 

Weebit’s disruptive ReRAM cell consists of 2 metal layers with a Silicon Oxide (SiOx) layer between them. In an initial, one-time, forming step, positive voltage is applied on the cell to form a conductive filament, and entering a Low Resistive State (LRS). After that – applying negative voltage can break the filament, moving to a High Resistive State (HRS), and positive and negative voltages can cause the cell to move from one state to the other.