Thanks to its simple structure, a ReRAM cell is small, fast, easy to stack, and consumes extremely low power. The key challenge in ReRAM technology is in choosing the appropriate resistive material that enables changes to its chemical or physical structure, and is able to restore it in the most repeatable and cost effective manner.
The Technical Structure
Weebit’s ReRAM cell consists of 2 metal layers with a Silicon Oxide (SiOx) layer between them. In an initial, one-time, forming step, positive voltage is applied on the cell to form a conductive filament, and entering a Low Resistive State (LRS). After that – applying negative voltage can break the filament, moving to a High Resistive State (HRS), and positive and negative voltages can cause the cell to move from one state to the other.