Resistive Random-Access Memory (ReRAM) is one of the several emerging non-volatile memories (NVMs) that are currently under intense scrutiny as a potential replacement/complement of mainstream technologies (Flash, DRAM, SRAM) in a host of embedded and stand-alone applications.
Weebit Nano, an emerging memory startup announced that it has integrated an oxide-based ReRAM (OxRAM) memory cell with an ovonic threshold switching (OTS) selector, created with its development partner, CEA-Leti.
This achievement is a significant step towards broadening Weebit’s target market beyond embedded non-volatile memory (NVM) to include discrete memory technology, and will enable the implementation of 3D memory stacking and crossbar architectures in future developments.
Weebit Nano’s (ASX:WBT) Coby Hanoch speaks to Proactive’s Andrew Scott soon after announcing a key technology milestone – the first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector.
Demonstrating what is believed to be the industry’s first commercial integration of an ovonic threshold switching (OTS) selector with an oxide-based ReRAM cell, Weebit Nano says it is a significant step in the implementation of 3D memory stacking and crossbar architectures in future developments.
Weebit’s ReRAM is made of simple, fab-friendly materials. Two-mask added with very few added steps. Easily integrated into any fabrication using various deposition techniques to allow for manufacturing flexibility. Rapid development by using CMOS compatible process materials. The result is highly scalable, low cost and effort, low power consumption, and high endurance and reliability.