In September, semiconductor player Weebit Nano signed the first commercial deal to take its ReRAM technology to volume production with US-based SkyWater.

Weebit Nano has demonstrated its silicon-oxide resistive RAM (ReRAM) technology on a 28nm fully-depleted silicon-on-insulator (FDSOI) process.

Weebit Nano and CEA-Leti have demonstrated production-level parameters of Weebit’s ReRAM technology in a 28nm process.

Semiconductor supply chains have been high on trade meeting agendas in recent weeks.

Resistive Random-Access Memory (ReRAM) is one of the several emerging non-volatile memories (NVMs) that are currently under intense scrutiny as a potential replacement/complement of mainstream technologies (Flash, DRAM, SRAM) in a host of embedded and stand-alone applications.

Weebit Nano’s ReRAM is to be mass-produced by SkyWater, the Minnesota Foundry.

Expert Talks Mr. Coby Hanoch – Watch the video now!

The companies have announced an agreement to take Weebit’s Resistive RAM memory technology to volume production.

Weebit Nano has said that its ReRAM is to be mass-produced by SkyWater, the Minnesota foundry, which has licensed the technology for use with customer designs.

Coby Hanoch, Weebit Nano CEO joins Annette for a quick tour of a the Aussie-listed tech play’s maiden commercial deal – and it’s a big one – with US semiconductor foundry SkyWater Technologies

Weebit Nano has signed a deal with US-based Skywater to bring its technology into volume production

Interview with Coby Hanoch, Weebit CEO

by Max Maxfield

In this post contributor Ron Neale analyzes Weebit Nano’s recently-announced memory array, based on an Ovonic Threshold Switch selector developed by CEA-Leti in France.

Weebit Nano, a developer of next-generation semiconductor memory technologies, has completed the design and verification stages of its embedded ReRAM module.

Weebit Nano has completed the design and verification stages of its embedded ReRAM module, and taped-out a test-chip that integrates this module.

Weebit Nano, an emerging memory startup announced that it has integrated an oxide-based ReRAM (OxRAM) memory cell with an ovonic threshold switching (OTS) selector, created with its development partner, CEA-Leti.

This achievement is a significant step towards broadening Weebit’s target market beyond embedded non-volatile memory (NVM) to include discrete memory technology, and will enable the implementation of 3D memory stacking and crossbar architectures in future developments.

Weebit Nano’s (ASX:WBT) Coby Hanoch speaks to Proactive’s Andrew Scott soon after announcing a key technology milestone – the first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector.

Demonstrating what is believed to be the industry’s first commercial integration of an ovonic threshold switching (OTS) selector with an oxide-based ReRAM cell, Weebit Nano says it is a significant step in the implementation of 3D memory stacking and crossbar architectures in future developments.

Israel-based RRAM developer Weebit Nano announced that it has developed the world’s first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector.

Weebit and its development partner CEA-Leti achieved this key milestone three months ahead of Weebit’s previously announced schedule.

Recently, Weebit Nano Ltd filed a patent describing new technologies in the field of ReRAM. So what is ReRAM, what does the patent describe, and how can ReRAM help with memory technologies of the future?

Weebit Nano (WBT) spent the March quarter chasing its first commercial agreement and making progress on its embedded memory module.

Weebit Nano’s ReRAM memories are intended to serve as stand-alone storage units, but also to be integrated on SoCs (System on a Chip), that is to say chips for on-board electronics which contain at the both computing power and storage.

Weebit’s ReRAM is made of simple, fab-friendly materials. Two-mask added with very few added steps. Easily integrated into any fabrication using various deposition techniques to allow for manufacturing flexibility. Rapid development by using CMOS compatible process materials. The result is highly scalable, low cost and effort, low power consumption, and high endurance and reliability.