Weebit Nano, a developer of next-generation semiconductor memory technologies, has completed the design and verification stages of its embedded ReRAM module.
Weebit Nano has completed the design and verification stages of its embedded ReRAM module, and taped-out a test-chip that integrates this module.
Weebit Nano, an emerging memory startup announced that it has integrated an oxide-based ReRAM (OxRAM) memory cell with an ovonic threshold switching (OTS) selector, created with its development partner, CEA-Leti.
This achievement is a significant step towards broadening Weebit’s target market beyond embedded non-volatile memory (NVM) to include discrete memory technology, and will enable the implementation of 3D memory stacking and crossbar architectures in future developments.
Weebit Nano’s (ASX:WBT) Coby Hanoch speaks to Proactive’s Andrew Scott soon after announcing a key technology milestone – the first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector.
Demonstrating what is believed to be the industry’s first commercial integration of an ovonic threshold switching (OTS) selector with an oxide-based ReRAM cell, Weebit Nano says it is a significant step in the implementation of 3D memory stacking and crossbar architectures in future developments.
Israel-based RRAM developer Weebit Nano announced that it has developed the world’s first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector.
Weebit and its development partner CEA-Leti achieved this key milestone three months ahead of Weebit’s previously announced schedule.
Recently, Weebit Nano Ltd filed a patent describing new technologies in the field of ReRAM. So what is ReRAM, what does the patent describe, and how can ReRAM help with memory technologies of the future?
Weebit Nano (WBT) spent the March quarter chasing its first commercial agreement and making progress on its embedded memory module.
Weebit Nano’s ReRAM memories are intended to serve as stand-alone storage units, but also to be integrated on SoCs (System on a Chip), that is to say chips for on-board electronics which contain at the both computing power and storage.
Four times cheaper to manufacture than NAND in SSDs, ReRAM components are also more efficient and more durable.
Weebit’s ReRAM is made of simple, fab-friendly materials. Two-mask added with very few added steps. Easily integrated into any fabrication using various deposition techniques to allow for manufacturing flexibility. Rapid development by using CMOS compatible process materials. The result is highly scalable, low cost and effort, low power consumption, and high endurance and reliability.
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Weebit Nano Ltd. is working to transfer its silicon-oxide resistive R A M (ReRAM) trchnology to a South Korean manufacturer of analog and mixed-signal cricuits.
Israeli-based Weebit Nano and CEA-Leti were demonstrating a neuromorphic processing demo at the FMS. The neuromorphic were using Weebit Nano’s SiOx-based ReRAM technology.
Companies to jointly investigate ways to use Weebit’s SiOx ReRAM technology in XTX products and explore potential co-operation in sales and marketing activities in China
A new crop of memories in R&D could have a big impact on future compute architectures. Several next-generation memory types are ramping up after years of R&D, but there are still more new memories in the research pipeline.
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Israeli-based Weebit Nano and CEA-Leti were demonstrating a neuromorphic processing demo at the FMS. The neuromorphic were using Weebit Nano’s SiOx-based ReRAM technology.
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Weebit Nano Ltd., founded in 2014, has an R&D agreement with Rice University (Houston) and has licensed seven patents on the silicon-oxide ReRAM technology being developed by Rice professor James Tour.
Weebit Nano Ltd. is partnering with the non-volatile memory research group at the Indian Institute of Technology Delhi (IITD) to collaborate on the use of ReRAM for neuromorphic applications.
